INGAAS/INP-PHOTODIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION

被引：5

作者：

BUCHALI, F

BEHRENDT, R

HEYMANN, G

机构：

[1] Humboldt-Universität zu Berlin, Sektion Elektronik, 0-1040 Berlin

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

PHOTODIODES; DIODES;

D O I：

10.1049/el:19910152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From I(V) and C(V) measurements the conclusion is made that among the sources of dark current in InGaAs/InP diodes, generation-recombination current dominates. Four different contributions to the dark from material layers have been identified. The highest generation rate was observed in the InP buffer layer. Various traps causing the dark current in these different layers have also been identified.

引用

页码：235 / 237

页数：3

共 4 条

[1] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING
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[4] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
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