A novel basis set of quantum calculations in MESFET and JFET devices

Sub-band occupation in MESFET (metal-semiconductor field-effect transistors) and JFET ( junction field-effect transistor devices) has been modelled by use of a simple ( sinusoidal) basis set. Such a simple basis set has easily evaluated matrix elements, allowing calculations to be easily performed. We have calculated sub-band energies and Fermi energy against electron concentration in these devices and find good agreement with previously calculated results. We have compared gate voltage/electron concentration curves calculated in our quantum model with the abrupt depletion approximation. The quantum curves show no structure and good agreement with the abrupt depletion model. This shows the abrupt depletion model to be an excellent approximation in these devices for electrostatic problems, even in the quantum limit ( one occupied sub-band).