SHALLOW-ACCEPTOR CONTRIBUTION TO THE NEAR-RESONANCE SPIN-FLIP RAMAN-SCATTERING IN SEMICONDUCTORS

被引：4

作者：

WALUKIEWICZ, W ^{[1
]}

AGGARWAL, RL ^{[1
]}

STOELINGA, JHM ^{[1
]}

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.19.6350

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6350 / 6357

页数：8

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