BAND OFFSET OF GAAS/IN0.48GA0.52P MEASURED UNDER HYDROSTATIC-PRESSURE

被引：107

作者：

CHEN, JH

SITES, JR

SPAIN, IL

HAFICH, MJ

ROBINSON, GY

机构：

[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523

[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature photoluminescence spectra of an In0.48Ga0.52P alloy and a p-type GaAs/In0.48Ga0.52P multiple quantum well, both grown by molecular beam epitaxy, have been obtained under hydrostatic pressures from 0 to 6 GPa. The zero-pressure extrapolation of the InGaP(X) to GaAs(GAMMA) transitions yields a 0.40 +/- 0.02 valence-band offset, and hence only a small, 0.06 +/- 0.02 eV, conduction-band offset. These offset values are in agreement with measured values of the confinement energy versus well width.

引用

页码：744 / 746

页数：3

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