DOUBLE INJECTION CURRENTS IN LONG P-I-N DIODES WITH ONE TRAPPING LEVEL

被引：22
作者：
DEULING, HJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 05期
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D O I：
10.1063/1.1659186
中图分类号：
O59 [应用物理学];
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页码：2179 / &
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