SCANNING TUNNELING SPECTROSCOPY OF OXYGEN ADSORBATES ON THE GAAS(110) SURFACE

被引:58
作者
STROSCIO, JA [1 ]
FEENSTRA, RM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词
D O I
10.1116/1.584199
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1472 / 1478
页数:7
相关论文
共 27 条
[1]   REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
HAMANN, DR ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2032-2034
[2]  
BINNIG G, 1986, IBM J RES DEV, V30, P355
[3]  
BINNIG G, 1982, HELV PHYS ACTA, V55, P726
[4]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[5]   ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1979, 29 (03) :267-271
[6]   SCANNING TUNNELING MICROSCOPY STUDIES OF SI(111)-2X1 SURFACES [J].
FEENSTRA, RM ;
THOMPSON, WA ;
FEIN, AP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1315-1319
[7]   REAL-SPACE OBSERVATION OF PI-BONDED CHAINS AND SURFACE DISORDER ON SI(111)2X1 [J].
FEENSTRA, RM ;
THOMPSON, WA ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1986, 56 (06) :608-611
[8]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[9]   TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929
[10]   SCANNING TUNNELING MICROSCOPE FOR LOW-TEMPERATURE, HIGH MAGNETIC-FIELD, AND SPATIALLY RESOLVED SPECTROSCOPY [J].
FEIN, AP ;
KIRTLEY, JR ;
FEENSTRA, RM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (10) :1806-1810