ELECTRICAL-CONDUCTION IN GERMANIUM DIOXIDE THIN-FILMS

[1] DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON [J]. THIN SOLID FILMS, 1977, 42 (02) : 227 - 235

[2] EMTAGE PR, 1962, PHYS REV LETT, V8, P167

[3] EFFECT OF CO-DEPOSITION OF IVB METAL-OXIDES ON THE POLYMORPHISM OF CHEMICALLY VAPOR-DEPOSITED TIO-2 [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 269 - 273

[4] ELECTRICAL CONDUCTION IN SILICON MONOXIDE FILMS [J]. THIN SOLID FILMS, 1970, 5 (5-6) : 287 - +

[5] NON-OHMIC CONDUCTION IN VACUUM-DEPOSITED SIO FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (09) : 639 - &

[6] ELECTRICAL-CONDUCTION IN REACTIVELY SPUTTERED TANTALUM OXIDE THIN-FILMS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (15) : 2081 - 2096

[7] MEMORY SWITCHING IN GEO2 FILMS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) : 215 - 216

[8] ELECTRICAL-PROPERTIES OF GEO2 FILMS [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 6155 - 6161

[9] THE ELECTRICAL-CONDUCTIVITY OF THIN-FILMS USING GEO2 AS THE DIELECTRIC MATERIAL [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (01): : 251 - 257

[10] ELECTRICAL CHARACTERIZATION OF AMORPHOUS-GERMANIUM DIOXIDE FILMS [J]. THIN SOLID FILMS, 1984, 113 (03) : 173 - 184

[1] DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON [J]. THIN SOLID FILMS, 1977, 42 (02) : 227 - 235

[2] EMTAGE PR, 1962, PHYS REV LETT, V8, P167

[3] EFFECT OF CO-DEPOSITION OF IVB METAL-OXIDES ON THE POLYMORPHISM OF CHEMICALLY VAPOR-DEPOSITED TIO-2 [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 269 - 273

[4] ELECTRICAL CONDUCTION IN SILICON MONOXIDE FILMS [J]. THIN SOLID FILMS, 1970, 5 (5-6) : 287 - +

[5] NON-OHMIC CONDUCTION IN VACUUM-DEPOSITED SIO FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (09) : 639 - &

[6] ELECTRICAL-CONDUCTION IN REACTIVELY SPUTTERED TANTALUM OXIDE THIN-FILMS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (15) : 2081 - 2096

[7] MEMORY SWITCHING IN GEO2 FILMS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) : 215 - 216

[8] ELECTRICAL-PROPERTIES OF GEO2 FILMS [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 6155 - 6161

[9] THE ELECTRICAL-CONDUCTIVITY OF THIN-FILMS USING GEO2 AS THE DIELECTRIC MATERIAL [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (01): : 251 - 257

[10] ELECTRICAL CHARACTERIZATION OF AMORPHOUS-GERMANIUM DIOXIDE FILMS [J]. THIN SOLID FILMS, 1984, 113 (03) : 173 - 184