共 50 条
- [1] Si-induced disordering of In0.53Ga0.47As/In0.52Al0.48 As multiquantum well structure Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1731 - 1733
- [2] Compositional disordering of In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures by repetitive rapid thermal annealing Miyazawa, Takeo, 1600, (28):
- [3] COMPOSITIONAL DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS MULTIQUANTUM WELL STRUCTURES BY REPETITIVE RAPID THERMAL ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (05): : L730 - L733
- [7] Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures Semiconductors, 2013, 47 : 935 - 942
- [8] Multiple cations interdiffusion in In0.53Ga0.47As/In0.52Al0.48As quantum well INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 377 - 382