USE OF OXYGEN-DOPED ALXGA1-XAS FOR INSULATING LAYER IN MIS STRUCTURES

被引：20

作者：

CASEY, HC

CHO, AY

NICOLLIAN, EH

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 10期

关键词：

D O I：

10.1063/1.89853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：678 / 679

页数：2

共 10 条

[1] FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].

BAYRAKTAROGLU, B ;

KOHN, E ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1976, 12 (02) :53-54

[2] LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DILORENZO, JV ;

HEWITT, BS ;

NIEHAUS, WC ;

SCHLOSSER, WO ;

RADICE, C .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :346-349

[3] PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].

HAISTY, RW ;

STRATTON, R ;

MEHAL, EW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&

[4]

Lampert M.A., 1970, CURRENT INJECTION SO

[5]

LANG DV, COMMUNICATION

[6] DEPLETION-MODE GAAS MOS FET [J].

LILE, DL ;

CLAWSON, AR ;

COLLINS, DA .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :207-208

[7] GAAS-SIXOYNZ MIS FET [J].

MESSICK, L .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5474-5475

[8] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J].

MILLER, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) :1103-&

[9] ELECTRICAL-PROPERTIES OF ANODIC AND PYROLYTIC DIELECTRICS ON GALLIUM-ARSENIDE [J].

ZEISSE, CR ;

MESSICK, LJ ;

LILE, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :957-960

[10] FREQUENCY-DEPENDENCE OF C AND DELTA-V-DELTA(C-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIES [J].

ZOHTA, Y .

SOLID-STATE ELECTRONICS, 1973, 16 (09) :1029-1035

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