BENT-BAND THEORY OF CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES

被引:6
作者
TAKESHIMA, M
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词
D O I
10.1103/PhysRevB.36.1186
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:1186 / 1203
页数:18
相关论文
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