GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED CAXSR1-XF2 ON GAAS(100)

被引：14

作者：

SINHAROY, S

MCMULLIN, PG

GREGGI, J

LIN, YF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：875 / 878

页数：4

共 21 条

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[14]

Onoda H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P680

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PHYSICAL REVIEW B, 1986, 34 (10) :7295-7306

[16] EPITAXIAL-GROWTH OF CAF2 ON GAAS(100) [J].

SINHAROY, S ;

HOFFMAN, RA ;

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NOREIKA, AJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :842-845

[17] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1642-1646

[18] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (12) :1146-1148

[19] GROWTH OF SEMICONDUCTOR INSULATOR STRUCTURES - GAAS/FLUORIDE/GAAS (001) [J].

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[20] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J].

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ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :587-589

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