GUNN-EFFECT OSCILLATORS WITH VAPOUR-GROWN CONTACT LAYERS

[1] BRADY DP, 1966, SEP S GALL ARS READ

[2] BRADY DP, 1966, P I ELECT ELECTRONIC, V54, P1498

[3] CARROLL JE, 1966, 4 INT C MICR OPT GEN

[4] HILSUM C, 1965, ELECTRON LETT, V1, P178

[5] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[1] BRADY DP, 1966, SEP S GALL ARS READ

[2] BRADY DP, 1966, P I ELECT ELECTRONIC, V54, P1498

[3] CARROLL JE, 1966, 4 INT C MICR OPT GEN

[4] HILSUM C, 1965, ELECTRON LETT, V1, P178

[5] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &