CAPACITANCE OF A RESONANT TUNNELING DIODE

被引:4
|
作者
HU, Y
STAPLETON, SP
机构
[1] School of Engineering Science, Simon Fraser University, Burnaby, BC
关键词
HOT ELECTRON DISTRIBUTION; RESONANT TUNNELING; RTD;
D O I
10.1143/JJAP.31.23
中图分类号
O59 [应用物理学];
学科分类号
摘要
The capacitance of the resonant tunneling diode (RTD) is calculated based on Poisson's equation and the damped resonant tunneling model, where the incoherent electrons in the quantum well are modeled by the hot electron distribution. In the positive differential resistance region, our results are close to those obtained by using the formulas of E. R. Brown, C. D. Parker and T. C. L. G. Sollner, C = S-epsilon-epsilon-0/d, with d measuring the total width of the RTD (including the depletion and accumulation regions). However, in the negative differential resistance region, our result is significantly smaller than that derived by using the formulas of Brown, Parker and Sollner due to the contribution of electrons in the quantum well.
引用
收藏
页码:23 / 25
页数:3
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