EFFICIENCY OF NEUTRON TRANSMUTATION DOPING OF INP INVESTIGATED BY OPTICAL AND ELECTRICAL METHODS

被引：11
|
作者：
BOUDART, B
MARI, B
PREVOT, B
SCHWAB, C
机构：
[1] Centre de Recherches Nucléaires, IN2P3-CNRS / Université Louis Pasteur, Groupe Recherches Physiques et Matériaux, F-67037 Strasbourg Cedex
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 63卷 / 1-2期
关键词：
D O I：
10.1016/0168-583X(92)95177-S
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Unintentionally doped InP substrates have been neutron irradiated with fluences spanning the 10(16)-10(17) range and then thermally annealed at 500-degrees-C/10 s using the proximity configuration. Optical methods like Raman scattering and infrared spectroscopy as well as Hall effect measurements have been used for electrical characterization. After thermal anneal, lattice perfection was found to be almost recovered. High doping efficiency was evaluated resulting in bulk shallow donor concentration values up to 10(18) cm-3.
引用
收藏
页码：101 / 105
页数：5
相关论文
共 50 条
  • [41] New recombination centres in InP:Fe doped by neutron transmutation
    Hernández-Fenollosa, MA
    Navarro, FJ
    Marí, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 104 - 108
  • [42] DOPING OF PHOSPHORUS IN HYDROGENATED AMORPHOUS-SILICON BY A NEUTRON TRANSMUTATION DOPING TECHNIQUE
    HAMANAKA, H
    KURIYAMA, K
    YAHAGI, M
    SATOH, M
    IWAMURA, K
    KIM, C
    KIM, Y
    SHIRAISHI, F
    TSUJI, K
    MINOMURA, S
    APPLIED PHYSICS LETTERS, 1984, 45 (07) : 786 - 788
  • [43] APPLICATION OF NEUTRON TRANSMUTATION DOPING FOR PRODUCTION OF HOMOGENEOUS EPITAXIAL LAYERS
    PRUSSIN, S
    CLELAND, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 350 - 352
  • [44] Neutron transmutation doping of Ill-VI layered semiconductors
    Mari, B
    Fenollosa, R
    Manjon, FJ
    Clemente, R
    Munoz, V
    Segura, A
    MATERIALS SCIENCE AND TECHNOLOGY, 1997, 13 (11) : 954 - 956
  • [45] Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping
    Galashev, A. E.
    Vorob'ev, A. S.
    SEMICONDUCTORS, 2020, 54 (06) : 641 - 649
  • [46] A new neutron transmutation doping system for radial irradiation uniformity
    Do Hyun Kim
    Han Rim Lee
    Jiseok Kim
    Myong-Seop Kim
    Byung-Gun Park
    Journal of the Korean Physical Society, 2021, 79 : 12 - 18
  • [47] Neutron transmutation doping of III-VI layered semiconductors
    Mari, B.
    Fenollosa, R.
    Manjon, F. J.
    Clemente, R.
    Materials Science and Technology, 13 (11):
  • [48] Neutron transmutation doping as an experimental probe for As-Se in ZnSe
    Wheeler, ED
    Boone, JL
    Farmer, JW
    Chandrasekhar, HR
    PHYSICAL REVIEW B, 1996, 53 (23) : 15617 - 15621
  • [49] Radiation measurements after irradiation of silicon for neutron transmutation doping
    Viererbl, L.
    Klupak, V.
    Vins, M.
    Lahodova, Z.
    Kolmistr, A.
    Stehno, J.
    RADIATION PHYSICS AND CHEMISTRY, 2014, 95 : 389 - 391
  • [50] Computer simulation of neutron transmutation doping of isotopically engineered heterostructures
    Kulikov, DV
    Kharlamov, VS
    Schmidt, AA
    Safonov, KL
    Korolev, SA
    Trushin, YV
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 228 : 230 - 234
12345