EFFICIENCY OF NEUTRON TRANSMUTATION DOPING OF INP INVESTIGATED BY OPTICAL AND ELECTRICAL METHODS

被引：11
|
作者：
BOUDART, B
MARI, B
PREVOT, B
SCHWAB, C
机构：
[1] Centre de Recherches Nucléaires, IN2P3-CNRS / Université Louis Pasteur, Groupe Recherches Physiques et Matériaux, F-67037 Strasbourg Cedex
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 63卷 / 1-2期
关键词：
D O I：
10.1016/0168-583X(92)95177-S
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Unintentionally doped InP substrates have been neutron irradiated with fluences spanning the 10(16)-10(17) range and then thermally annealed at 500-degrees-C/10 s using the proximity configuration. Optical methods like Raman scattering and infrared spectroscopy as well as Hall effect measurements have been used for electrical characterization. After thermal anneal, lattice perfection was found to be almost recovered. High doping efficiency was evaluated resulting in bulk shallow donor concentration values up to 10(18) cm-3.
引用
收藏
页码：101 / 105
页数：5
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