THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM

被引:400
|
作者
BARAFF, GA
KANE, EO
SCHLUTER, M
机构
来源
PHYSICAL REVIEW B | 1980年 / 21卷 / 12期
关键词
D O I
10.1103/PhysRevB.21.5662
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5662 / 5686
页数:25
相关论文
共 50 条
  • [41] O-IN GAP - A NEGATIVE-U CENTER
    KHOO, GS
    ONG, CK
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (23) : 3917 - 3924
  • [42] SUPERCONDUCTIVITY AND CHARGE ORDERING IN NEGATIVE-U SYSTEMS
    KULIK, IO
    PEDAN, AG
    SOLID STATE COMMUNICATIONS, 1983, 45 (11) : 971 - 973
  • [43] Negative-U superconductivity on the surface of topological insulators
    She, Jian-Huang
    Balatsky, Alexander V.
    PHYSICAL REVIEW B, 2014, 90 (10):
  • [44] Negative-U property of interstitial hydrogen in GaAs
    Kolkovsky, Vl.
    Nielsen, K. Bonde
    Larsen, A. Nylandsted
    Dobaczewski, L.
    PHYSICAL REVIEW B, 2008, 78 (03)
  • [45] Negative-U properties for substitutional Au in Si
    Corsetti, Fabiano
    Mostofi, Arash A.
    EPL, 2014, 105 (05)
  • [46] THE FORMATION OF NEGATIVE-U CENTERS IN DOPED HTSC
    IVANENKO, OM
    MITSEN, KV
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1994, 235 : 2313 - 2314
  • [48] Understanding the negative vacancy in silicon without configuration interaction theory
    Gerstmann, U
    Rauls, E
    Overhof, H
    Frauenheim, T
    PHYSICAL REVIEW B, 2002, 65 (19): : 1 - 7
  • [49] HARTREE THEORY FOR THE NEGATIVE-U EXTENDED HUBBARD-MODEL - GROUND-STATE
    ROBASZKIEWICZ, S
    MICNAS, R
    CHAO, KA
    PHYSICAL REVIEW B, 1981, 24 (07): : 4018 - 4024
  • [50] Some Properties of the Positive-U and Negative-U Hubbard Model
    Mancini, F.
    Marinaro, M.
    Matsumoto, H.
    International Journal of Modern Physics B, 10 (13-14):