THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] APPELBAUM JA, 1973, PHYS REV B, V8, P777

[3] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895

[4] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[5] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3563 - 3570

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[7] SIMPLER EXPRESSION FOR EVALUATING THE DENSITY MATRIX IN THE SELF-CONSISTENT GREEN-FUNCTION METHOD [J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4363 - 4364

[8] BARAFF GA, UNPUBLISHED

[9] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 895 - 899

[10] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] APPELBAUM JA, 1973, PHYS REV B, V8, P777

[3] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895

[4] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[5] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3563 - 3570

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[7] SIMPLER EXPRESSION FOR EVALUATING THE DENSITY MATRIX IN THE SELF-CONSISTENT GREEN-FUNCTION METHOD [J]. PHYSICAL REVIEW B, 1979, 20 (10): : 4363 - 4364

[8] BARAFF GA, UNPUBLISHED

[9] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 895 - 899

[10] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789