TEMPERATURE-DEPENDENCE OF ELECTRONIC-TRANSITIONS IN MGO, ALPHA-AL2O3, AND ALPHA-SIO2 - FINAL-STATE EFFECTS ON PHONON COUPLING

被引：18

作者：

OBRIEN, WL ^{[1
]}

JIA, J ^{[1
]}

DONG, QY ^{[1
]}

CALLCOTT, TA ^{[1
]}

MUELLER, DR ^{[1
]}

EDERER, DL ^{[1
]}

机构：

[1] NIST,GAITHERSBURG,MD 20899

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3882

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present temperature-dependent soft-x-ray emission and soft-x-ray absorption measurements on MgO, alpha-Al2O3, and alpha-SiO2. The measurements show in detail the final-state effect on phonon broadening for transitions involving the Mg 2P core state in MgO. In addition, we report the temperature dependence of emission and absorption features for MgO, alpha-Al2O3, and alpha-SiO2. The temperature dependence of the transitions involving the valence- and conduction-band states should be an important check on band-structure calculations. These results are compared to published temperature-dependent optical-reflectivity measurements.

引用

页码：3882 / 3885

页数：4

共 16 条

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