DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS

被引：93
作者：
OSBURN, CM
ORMOND, DW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 05期
关键词：
D O I：
10.1149/1.2404269
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：597 / +
页数：1
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