MATERIAL CHARACTERISTICS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION HG1-XCDXTE/GAAS/SI

被引：38
|
作者：
EDWALL, DD
BAJAJ, J
GERTNER, ER
机构：
[1] Rockwell International Science Center, Thousand Oaks, California 91360
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.576959
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Layers of epitaxial Hg1-xCdx Te have been grown by metalorganic chemical vapor deposition (MOCVD) on GaAs/Si substrates. Data is presented on surface morphology, compositional uniformity, double crystal x-ray diffraction, chemical defect etching, laser beam induced current imaging, and Hall effect. Compositional uniformity is 6% for 3 in. diam areas and 0.6% for the interior 2 in. diam area. The material characteristics of these layers are in the range suitable for fabrication of infrared detectors. The material characteristics are compared with those of similar layers grown on bulk GaAs substrates. © 1990, American Vacuum Society. All rights reserved.
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页码：1045 / 1048
页数：4
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