GUNN-EFFECT BISTABLE SWITCHERS

被引：0

作者：

BRCHE, MA

KOZLOV, AT

KRAVCHENKO, LN

PASHINTSEV, YI

SAPELNIKOV, AN

STAROSELSKY, VI

TRANCHENKO, VD

机构：

来源：

RADIOTEKHNIKA I ELEKTRONIKA | 1980年 / 25卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：836 / 842

页数：7

共 18 条

[1] EXPERIMENTAL EVIDENCE OF BISTABLE SWITCHING IN A GUNN EPITAXIAL COPLANAR DIODE BY ANODE-SURFACE LOADING [J].

BOCCONGI.D ;

TESZNER, JL .

ELECTRONICS LETTERS, 1971, 7 (16) :468-&

[2]

BONCHBRUEVICH VL, 1972, DOMENNAYA ELEKTRICHE, pCH2

[3] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[4] CONVECTIVE AND ABSOLUTE INSTABILITIES IN SEMICONDUCTORS EXHIBITING NEGATIVE DIFFERENTIAL MOBILITY [J].

GUERET, P .

PHYSICAL REVIEW LETTERS, 1971, 27 (05) :256-+

[5]

HARIU T, 1974, IEEE T ELECTRON DEVI, V21, P681

[6] INFLUENCE OF CARRIER DIFFUSION ON AN ANODE TRAPPED DOMAIN FORMATION IN A TRANSFERRED ELECTRON DEVICE [J].

HASUO, S ;

NAKAMURA, T ;

GOTO, G ;

KAZETANI, K ;

ISHIWARI, H ;

SUZUKI, H ;

ISOBE, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1063-1069

[7] INFLUENCE OF DIFFUSION ON STABILITY OF SUPERCRITICAL TRANSFERRED ELECTRON AMPLIFIER [J].

JEPPESEN, P ;

JEPPSSON, B .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (04) :452-+

[8] BROAD-BAND NEGATIVE CONDUCTANCE GAAS TED [J].

JEPPESEN, P ;

JEPPSSON, B ;

JONDRUP, P .

PROCEEDINGS OF THE IEEE, 1975, 63 (09) :1364-1365

[9] BISTABLE SWITCHING IN SUPERCRITICAL N+-N-N+ GAAS TRANSFERRED ELECTRON DEVICES [J].

JONDRUP, P ;

JEPPESEN, P ;

JEPPSSON, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1028-1035

[10]

JZADPANAH SH, 1976, SOL ST ELECTRON, V19, P129

← 1 2 →