LUMINESCENCE OF SILICON CARBIDE DOPED WITH BORON AND NITROGEN

被引:0
|
作者
PAVLICHE.VI
PRONIN, BV
RYZHIKOV, IV
机构
来源
SOVIET PHYSICS SOLID STATE,USSR | 1971年 / 12卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1712 / +
页数:1
相关论文
共 50 条
  • [41] Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide
    Phelps, GJ
    Chester, EG
    Johnson, CM
    Wright, NG
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) : 4285 - 4290
  • [42] LUMINESCENCE OF SILICON CARBIDE DOPED WITH BERYLLIUM DURING GROWTH FROM VAPOR PHASE
    KALNIN, AA
    SELEZNEV, BI
    TAIROV, YM
    SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (11): : 2599 - &
  • [43] Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide
    Phelps, G.J. (gordonphelps@compuserve.com), 1600, American Institute of Physics Inc. (94):
  • [44] ION IMPLANTATION EFFECTS OF NITROGEN, BORON, AND ALUMINUM IN HEXAGONAL SILICON-CARBIDE
    ADDAMIANO, A
    ANDERSON, GW
    LUCKE, W
    COMAS, J
    HUGHES, HL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1355 - +
  • [45] Origin of superconductivity in boron-doped silicon carbide from first principles
    Noffsinger, Jesse
    Giustino, Feliciano
    Louie, Steven G.
    Cohen, Marvin L.
    PHYSICAL REVIEW B, 2009, 79 (10)
  • [46] Specific heat and electronic states of superconducting boron-doped silicon carbide
    Kriener, M.
    Maeno, Y.
    Oguchi, T.
    Ren, Z. -A.
    Kato, J.
    Muranaka, T.
    Akimitsu, J.
    PHYSICAL REVIEW B, 2008, 78 (02)
  • [47] STRENGTH OF BORON-DOPED, HOT-PRESSED SILICON-CARBIDE
    PROCHAZKA, S
    CHARLES, RJ
    AMERICAN CERAMIC SOCIETY BULLETIN, 1973, 52 (12): : 885 - 891
  • [48] IMPURITY ABSORPTION IN SILICON CARBIDE CRYSTALS DOPED WITH BORON DURING CRYSTAL GROWTH
    PICHUGIN, IG
    PIKHTIN, AN
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (02): : 465 - &
  • [49] Characterization of nitrogen-doped amorphous silicon carbide thin films
    Slovak Acad of Sciences, Bratislava, Slovakia
    Vacuum, 2 (165-167):
  • [50] Laser writing of nitrogen-doped silicon carbide for biological modulation
    Nair, Vishnu
    Yi, Jaeseok
    Isheim, Dieter
    Rotenberg, Menahem
    Meng, Lingyuan
    Shi, Fengyuan
    Chen, Xinqi
    Gao, Xiang
    Prominski, Aleksander
    Jiang, Yuanwen
    Yue, Jiping
    Gallagher, Charles T.
    Seidman, David N.
    Tian, Bozhi
    SCIENCE ADVANCES, 2020, 6 (34):