DEFECT LEVELS IN SILICON DOPED WITH TRANSITION-ELEMENTS

被引：0
|
作者：
EVWARAYE, AO [1 ]
机构：
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 06期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：736 / 736
页数：1
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