DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON

被引：118

作者：

HU, SM ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 02期

关键词：

D O I：

10.1063/1.89580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：53 / 55

页数：3

共 13 条

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[9]

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