P-N JUNCTIONS IN COMPENSATED SOLUTION-GROWN GAP

被引：8

作者：

LOGAN, RA

WHITE, HG

TRUMBORE, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.1709936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2500 / &

共 17 条

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CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :374-&

[2] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[3]

DASH WC, 1960, PROPERTIES ELEMENTAL, P206

[4] FORMATION OF BUILT-IN LIGHT-EMITTING JUNCTIONS IN SOLUTION-GROWN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS [J].

FOSTER, LM ;

PLASKETT, TS ;

SCARDEFI.JE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) :114-&

[5]

GATOS C, 1960, PROPERTIES ELEMEN ED, P206

[6] RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GAP PHOTOLUMINESCENCE - (DONOR-ACCEPTOR PAIR BANDS - 20 TO 298 DEGREES K - AR LASER EXCITATION - E/T) [J].

GERSHENZON, M ;

MIKULYAKRM .

APPLIED PHYSICS LETTERS, 1966, 8 (10) :245-+

[7] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

GERSHENZON, M ;

LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[8] STRUCTURAL DEFECTS IN GAP CRYSTALS + THEIR ELECTRICAL + OPTICAL EFFECTS [J].

GERSHENZON, M ;

MIKULYAK, RM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2132-&

[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[10]

LOFERSKI JJ, 1961, RCA REV, V22, P38

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