GROWTH AND CHARACTERISTICS OF HIGH OPTICAL-QUALITY LATTICE-MATCHED GAINASP LAYERS AND GAINASP/GAINAS QUANTUM-WELLS ON INP BY MBE USING SOLID PHOSPHORUS AND ARSENIC VALVED CRACKING CELLS

被引：0

作者：

BAILLARGEON, JN ^{[1
]}

CHO, AY ^{[1
]}

THIEL, FA ^{[1
]}

PEARAH, PJ ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ECE,URBANA,IL 61801

来源：

COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP were grown by solid source MBE. Separate valved cracking cells, one utilizing in-situ generated white phosphorus and the other, arsenic were used to achieve a column V stoichiometric reproducibility of <1% for quaternary layers. Photo)luminescence emission at 300K from the quaternary layers displayed spectral widths as narrow as 40.6 meV at lambda similar to 1.43 mu m. GaInAs QW emission (lambda similar to 1.55 mu m) at 77K displayed spectra as narrow as 4.3 meV for a 75 Angstrom width. The data show that the quality of GaInAsP/GaInAs grown on InP with all solid sources is as good as that produced by any other method.

引用

页码：173 / 176

页数：4