EFFECT OF HYDROSTATIC-PRESSURE ON MOS FIELD-EFFECT TRANSISTORS

被引：0

作者：

WLODARSKI, W ^{[1
]}

机构：

[1] WARSAW POLITECH, INST AUTOM PRZEMYSLOWEJ, NARBUTTA 87, 02-524 WARSAW, POLAND

来源：

BULLETIN DE L ACADEMIE POLONAISE DES SCIENCES-SERIE DES SCIENCES TECHNIQUES | 1974年 / 22卷 / 06期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：529 / 536

页数：8

共 16 条

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[5] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J].

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[6] EFFECT OF STRAIN ON MOS TRANSISTORS [J].

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SOLID-STATE ELECTRONICS, 1969, 12 (03) :185-&

[7]

GOSLING W, 1971, FIELD EFFECT ELECTRO

[8]

KANDELAKI TS, 1973, MIKROELEKTRONIKA, V2, P259

[9]

Nuzillat G., 1973, Revue Technique Thomson-CSF, V5, P49

[10]

NUZILLAT G, 1972, MES REGUL AUTOMAT, V37, P89

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