PUNCHTHROUGH CURRENTS IN SHORT-CHANNEL MOST DEVICES

被引:12
作者
STUART, RA [1 ]
ECCLESTON, W [1 ]
机构
[1] UNIV LIVERPOOL, DEPT ELECT ENGN & ELECTR, POB 147, LIVERPOOL 8, ENGLAND
关键词
D O I
10.1049/el:19730434
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:586 / 588
页数:3
相关论文
共 7 条
[1]   THERMIONIC INJECTION AND SPACE-CHARGE-LIMITED CURRENT IN REACH-THROUGH P+NP+ STRUCTURES [J].
CHU, JL ;
SZE, SM ;
PERSKY, G .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3510-&
[2]   CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J].
FROHMANB.D ;
GROVE, AS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :108-+
[3]   AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS [J].
GURTLER, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :980-+
[4]   INFLUENCE OF ELECTRODE ON LOW TEMPERATURE ANNEALING OF INTERFACE STATES IN SI-SIO2 SYSTEM [J].
PEPPER, M ;
ECCESTON, W .
THIN SOLID FILMS, 1971, 8 (02) :133-&
[5]   MODULATION OF SPACE-CHARGE-LIMITED CURRENT FLOW IN INSULATED-GATE FIELD-EFFECT TETRODES [J].
RICHMAN, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (09) :759-+
[6]   LEAKAGE CURRENTS OF MOS DEVICES UNDER SURFACE-DEPLETION CONDITIONS [J].
STUART, RA ;
ECCLESTON, W .
ELECTRONICS LETTERS, 1972, 8 (09) :225-+
[7]   SPACE-CHARGE-LIMITED SOLID-STATE DEVICES [J].
WRIGHT, GT .
PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1642-+