LATERAL PROFILING OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：73
作者：
CHEN, WL
BALASINSKI, A
MA, TP
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
[2] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期
关键词：
D O I：
10.1109/16.249443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique to measure the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. This paper will cover the experimental details of this technique, along with some illustrative results. The various issues involved in its implementation and its practical limitations will also be discussed.
引用
收藏
页码：187 / 196
页数：10
相关论文
共 14 条
[1]   LATERAL DISTRIBUTION OF HOT-CARRIER-INDUCED INTERFACE TRAPS IN MOSFETS [J].
ANCONA, MG ;
SAKS, NS ;
MCCARTHY, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2221-2228
[2]  
ASENOV A, 1991, INSULATING FILMS ON SEMICONDUCTORS 1991, P247
[3]   CHARGE PUMPING IN MOS DEVICES [J].
BRUGLER, JS ;
JESPERS, PGA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) :297-+
[4]  
Chen W., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P731, DOI 10.1109/IEDM.1991.235319
[5]   A NEW TECHNIQUE FOR MEASURING LATERAL DISTRIBUTION OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS [J].
CHEN, WL ;
MA, TP .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) :393-395
[6]   HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING [J].
CHEN, WL ;
BALASINSKI, A ;
ZHANG, BL ;
MA, TP .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :201-202
[7]   INTERFACE STATE CREATION AND CHARGE TRAPPING IN THE MEDIUM-TO-HIGH GATE VOLTAGE RANGE (VD/2-GREATER-THAN-OR-EQUAL-TO-VG-GREATER-THAN-OR-EQUAL-TO-VD) DURING HOT-CARRIER STRESSING OF N-MOS TRANSISTORS [J].
DOYLE, B ;
BOURCERIE, M ;
MARCHETAUX, JC ;
BOUDOU, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :744-754
[8]   A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].
GROESENEKEN, G ;
MAES, HE ;
BELTRAN, N ;
DEKEERSMAECKER, RF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53
[9]   ANALYSIS OF THE CHARGE PUMPING TECHNIQUE AND ITS APPLICATION FOR THE EVALUATION OF MOSFET DEGRADATION [J].
HEREMANS, P ;
WITTERS, J ;
GROESENEKEN, G ;
MAES, HE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) :1318-1335
[10]   DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].
OGURA, S ;
TSANG, PJ ;
WALKER, WW ;
CRITCHLOW, DL ;
SHEPARD, JF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367
12