BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS

被引：440
|
作者：
EHRENREICH, H
机构：
来源：
PHYSICAL REVIEW | 1960年 / 120卷 / 06期
关键词：
D O I：
10.1103/PhysRev.120.1951
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1951 / 1963
页数：13
相关论文
共 50 条
  • [41] INJECTED-HOT-ELECTRON TRANSPORT IN GAAS
    LEVI, AFJ
    HAYES, JR
    PLATZMAN, PM
    WIEGMANN, W
    PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2071 - 2073
  • [42] BALLISTIC ELECTRON-TRANSPORT SEEN IN GAAS
    ROBINSON, AL
    SCIENCE, 1986, 231 (4733) : 22 - 24
  • [43] Electron Transport in GaAs Nanostructures under Irradiation
    N. V. Demarina
    S. V. Obolensky
    Technical Physics, 2002, 47 : 64 - 69
  • [44] Electron transport in GaAs nanostructures under irradiation
    Demarina, NV
    Obolensky, SV
    TECHNICAL PHYSICS, 2002, 47 (01) : 64 - 69
  • [45] Electron transport through GaAlAs barriers in GaAs
    1600, (74):
  • [46] Electron transport in implant isolation GaAs layers
    Synowiec, Z
    Paszkiewicz, B
    MICROELECTRONICS RELIABILITY, 2003, 43 (04) : 675 - 679
  • [47] Electron transport in low temperature grown GaAs
    Arifin, P
    Tansley, TL
    Goldys, EM
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 349 - 352
  • [48] Electron transport in GaAs at low lattice temperatures
    Ghorai, AK
    Bhattacharya, DP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 197 (01): : 125 - 136
  • [49] ELECTRON BAND STRUCTURE OF IRON
    CALLAWAY, J
    PHYSICAL REVIEW, 1955, 98 (04): : 1150 - 1151
  • [50] ELECTRON BAND STRUCTURE OF GOLD
    KUPRATAKULN, S
    FLETCHER, GC
    JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (10): : 1886 - +
12345