EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE

被引：142

作者：

GARDELIS, S ^{[1
]}

RIMMER, JS ^{[1
]}

DAWSON, P ^{[1
]}

HAMILTON, B ^{[1
]}

KUBIAK, RA ^{[1
]}

WHALL, TE ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.

引用

页码：2118 / 2120

页数：3

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