PROPERTIES OF ZN-DOPED VPE-GROWN GAN .1. LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONS

被引:121
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MONEMAR, B
LAGERSTEDT, O
GISLASON, HP
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10.1063/1.327318
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O59 [应用物理学];
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页码:625 / 639
页数:15
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[2]   SPECTRAL INTENSITY DISTRIBUTION OF DONOR-ACCEPTOR PAIR RECOMBINATION IN GAP [J].
BINDEMAN.R ;
UNGER, K .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :133-143
[3]   CATHODOLUMINESCENCE STUDY OF ZN DOPED GAN [J].
BOULOU, M ;
JACOB, G ;
BOIS, D .
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (11) :555-563
[4]   NATURE OF PREDOMINANT ACCEPTORS IN HIGH-QUALITY ZINC TELLURIDE [J].
DEAN, PJ ;
VENGHAUS, H ;
PFISTER, JC ;
SCHAUB, B ;
MARINE, J .
JOURNAL OF LUMINESCENCE, 1978, 16 (04) :363-394
[5]  
DEAN PJ, 1978, P INT C LUMIN PARIS
[6]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[7]   PHOTOCONDUCTIVITY OF ZN-DOPED GAN [J].
EJDER, E ;
FAGERSTROM, PO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :289-292
[8]   OPTICAL INVESTIGATIONS OF ZN, HG AND LI DOPED GAN [J].
EJDER, E ;
GRIMMEISS, HG .
APPLIED PHYSICS, 1974, 5 (03) :275-279
[9]   NEW RED PAIR LUMINESCENCE FROM GAP [J].
HENRY, CH ;
DEAN, PJ ;
CUTHBERT, JD .
PHYSICAL REVIEW, 1968, 166 (03) :754-&
[10]   LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].
ILEGEMS, M ;
LOGAN, RA ;
DINGLE, R .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&