ADSORPTION AND DESORPTION OF OXYGEN AND CARBON-MONOXIDE ON THE SI(111) SURFACE STUDIED BY ION-SCATTERING SPECTROSCOPY

被引：30
作者：
ONSGAARD, J [1 ]
HEILAND, W [1 ]
TAGLAUER, E [1 ]
机构：
[1] MAX PLANCK INST PLASMA PHYS,EURATOM IPP ASSOC,D-8046 GARCHING,FED REP GER
来源：
SURFACE SCIENCE | 1980年 / 99卷 / 01期
关键词：
D O I：
10.1016/0039-6028(80)90581-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：112 / 120
页数：9
相关论文
共 23 条
[1]   STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J].
BENNINGHOVEN, A ;
STORP, S .
APPLIED PHYSICS LETTERS, 1973, 22 (04) :170-171
[2]  
BOONSTRA AH, 1968, PHILIPS RES REPT S3
[3]  
BRONGERSMA HH, 1973, SURFACE SCI, V35, P392
[4]   EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J].
CARRIERE, B ;
DEVILLE, JP .
SURFACE SCIENCE, 1979, 80 (01) :278-286
[5]   ADSORPTION OF CO ON PLANAR AND OXYGEN-ETCHED SILICON SURFACES [J].
DYLLA, HF ;
KING, JG ;
CARDILLO, MJ .
SURFACE SCIENCE, 1978, 74 (01) :141-167
[6]   SORPTION OF CO AND O ON NI (111) STUDIED BY LEED AND ISS [J].
ENGLERT, W ;
HEILAND, W ;
TAGLAUER, E ;
MENZEL, D .
SURFACE SCIENCE, 1979, 83 (01) :243-252
[7]   ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].
GARNER, CM ;
LINDAU, I ;
SU, CY ;
PIANETTA, P ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956
[8]   INVESTIGATION OF SURFACE TOPOGRAPHY OF OXYGEN ON NICKEL SINGLE-CRYSTALS BY HELIUM ION BACKSCATTERING [J].
HEILAND, W ;
TAGLAUER, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (02) :620-&
[9]   OXYGEN ADSORPTION ON (110) SILVER [J].
HEILAND, W ;
IBERL, F ;
TAGLAUER, E ;
MENZEL, D .
SURFACE SCIENCE, 1975, 53 (DEC) :383-392
[10]   SURFACE AND THIN-FILM ANALYSIS OF SEMICONDUCTOR-MATERIALS [J].
HONIG, RE .
THIN SOLID FILMS, 1976, 31 (1-2) :89-122
123