STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS

被引：48

作者：

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

MARK, P ^{[1
]}

KAHN, A ^{[1
]}

SO, E ^{[1
]}

YEH, JL ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1252 / 1257

页数：6

共 50 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

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SURFACE SCIENCE, 1978, 74 (01) :21-33

[2] SURFACE BANDS IN RELAXED CLEAVAGE SURFACE OF GAP [J].

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[3] ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].

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[4] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].

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[5] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

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[6] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

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[7] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].

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[8] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J].

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[9] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

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COHEN, ML .

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[10] LEED INTENSITY ANALYSIS AND ELECTRON-SPECTROSCOPY OF ZNSE (110) [J].

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