A NOVEL CIRCUIT FOR THE EVALUATION OF THERMAL IMPEDANCE CHARACTERISTICS OF MOS INTEGRATED-CIRCUITS

被引：2

作者：

TARTER, TS

机构：

来源：

FIFTH ANNUAL IEEE SEMICONDUCTOR THERMAL AND TEMPERATURE MEASUREMENT SYMPOSIUM | 1989年

关键词：

D O I：

10.1109/STHERM.1989.76078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：131 / 135

页数：5

共 50 条

[31] PERFORMANCE OF MOS DEVICES AND INTEGRATED-CIRCUITS WITH GATE OXIDES GROWN BY RAPID THERMAL-OXIDATION
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[39] REQUIREMENTS TO BE MET BY PYROLYTIC OXIDES USED FOR MOS INTEGRATED-CIRCUITS
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[40] AN EFFICIENT METHOD FOR PARAMETRIC YIELD OPTIMIZATION OF MOS INTEGRATED-CIRCUITS
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