ELEVATED PRESSURE STUDY OF EFFECT OF DIFFERENT DONORS ON ELECTRON TRANSFER IN N-GAAS

被引：10

作者：

ADLER, PN

机构：

[1] Bayside Laboratory, Research Center of General Telephone, Electronics Laboratories, Bayside

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.1658237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The elevated-pressure resistance behavior of differently doped samples suggests that the ratio of mobility in the [000] conduction band to that in the [100] band is constant and independent of initial mobility. A mobility ratio of 39 is indicated at atmospheric pressure. Carrier freeze-out with respect to the [100] band was observed for S- and Si-doped samples but not with Se and Te. © 1969 The American Institute of Physics.

引用

页码：3554 / &

共 10 条

[1]

ADLER PN, UNPUBLISHED

[2]

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