MBE-GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 200

被引：10
|
作者：
ROCKETT, PI
PATE, MA
CLAXTON, PA
机构：
[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期
关键词：
D O I：
10.1109/16.47792
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief we report lattice-matched Ga 0.5 1In 0.49 P/GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy; we observe small-signal current gains as high as 200. We believe these results demonstrate the feasibility of using (InGa) P as an alternative to (AlGa) As in GaAs-based devices. © 1990 IEEE
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页码：810 / 811
页数：2
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