CRITICAL ANALYSIS OF ELECTRICAL CONTACTS TO LAYERED SEMICONDUCTORS FOR USE IN (PHOTO)ELECTROCHEMICAL STUDIES

被引:6
作者
ETMAN, M [1 ]
NEUMANNSPALLART, M [1 ]
机构
[1] LAB PHYS SOLIDE, CNRS, F-92195 MEUDON, FRANCE
关键词
D O I
10.1016/0022-0728(89)85148-4
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:411 / 422
页数:12
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共 115 条
[51]   ANISOTROPIC PHOTOCORROSION OF N-TYPE MOS2, MOSE2, AND WSE2 SINGLE-CRYSTAL SURFACES - THE ROLE OF CLEAVAGE STEPS, LINE AND SCREW DISLOCATIONS [J].
KAUTEK, W ;
GERISCHER, H .
SURFACE SCIENCE, 1982, 119 (01) :46-60
[52]   THE PHOTOELECTROCHEMISTRY OF THE AQUEOUS IODIDE IODINE REDOX SYSTEM AT N-TYPE MOSE2-ELECTRODES [J].
KAUTEK, W ;
GERISCHER, H .
ELECTROCHIMICA ACTA, 1981, 26 (12) :1771-1778
[53]   THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].
KAUTEK, W ;
GERISCHER, H ;
TRIBUTSCH, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478
[54]  
KAUTEK W, 1979, BER BUNSEN PHYS CHEM, V83, P1000, DOI 10.1002/bbpc.19790831010
[55]   THE APPLICABILITY OF SEMICONDUCTING LAYERED MATERIALS FOR ELECTROCHEMICAL SOLAR-ENERGY CONVERSION [J].
KAUTEK, W ;
GOBRECHT, J ;
GERISCHER, H .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (10) :1034-1040
[56]   ELECTRONIC MOBILITY ANISOTROPY OF LAYERED SEMICONDUCTORS - TRANSVERSAL PHOTOCONDUCTIVITY MEASUREMENTS AT N-MOSE2 [J].
KAUTEK, W .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16) :L519-L525
[57]   THE IMPEDANCE OF THE N-MOSE2/ACETONITRILE INTERFACE - A KINETIC AND ENERGETIC CHARACTERIZATION [J].
KAUTEK, W ;
GERISCHER, H .
ELECTROCHIMICA ACTA, 1982, 27 (08) :1035-1042
[58]   A KINETIC INTERPRETATION OF THE PHOTOCURRENTS OBTAINED WITH [FE(CN)6]4-, FE(II), AND I- AT N-TYPE MOSE2-ELECTRODES AND WSE2-ELECTRODES [J].
KAUTEK, W ;
WILLIG, F .
ELECTROCHIMICA ACTA, 1981, 26 (12) :1709-1713