ON THE USE OF GAAS-MESFETS IN THE REALIZATION OF LOW-FREQUENCY LOW-NOISE AMPLIFIERS FOR APPLICATIONS AT CRYOGENIC TEMPERATURES

被引：0

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作者：

ALESSANDRELLO, A

BROFFERIO, C

CAMIN, DV

GIULIANI, A

PESSINA, G

PREVITALI, E

机构：

来源：

GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989 | 1989年

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暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：223 / 226

页数：4

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