ON THE USE OF GAAS-MESFETS IN THE REALIZATION OF LOW-FREQUENCY LOW-NOISE AMPLIFIERS FOR APPLICATIONS AT CRYOGENIC TEMPERATURES

被引：0
|
作者：
ALESSANDRELLO, A
BROFFERIO, C
CAMIN, DV
GIULIANI, A
PESSINA, G
PREVITALI, E
机构：
来源：
GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989 | 1989年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：223 / 226
页数：4
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