Verification of power losses in the gate circuit in selected MOSFET transistors based on Si and SiC

被引：1
|
作者：
Przybyla, Krzysztof [1 ]
机构：
[1] Politech Slaska, Katedra Energoelekt Napedu Elektrycznego & Roboty, Ul Boleslawa Krzywoustego 2, PL-44100 Gliwice, Poland
来源：
PRZEGLAD ELEKTROTECHNICZNY | 2018年 / 94卷 / 01期
关键词：
power losses; MOSFET; gate circuit; SiC;
D O I：
10.15199/48.2018.01.33
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurement results of power losses in the gate circuit in Si: APT5010JFLL, IXFN44N80P and SiC: APT40SM120J MOSFET transistors are presented in the paper. Measurements were taken in class DE inverter configuration in frequency range from 275 kHz to 525 kHz and with inverter supply voltage E=0 V and E=300 V. The article contains also the comparison of evaluated power loss values, based on datasheets, with laboratory results.
引用
收藏
页码：129 / 132
页数：4
相关论文
共 50 条
  • [1] Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge
    Yano, Shinya
    Nakamatsu, Yusuke
    Horiguchi, Takeshi
    Soda, Shinnosuke
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 6661 - 6665
  • [2] Gate Driver Protection Methods for SiC MOSFET Short Circuit Testing
    Nevarez, Jairo
    Olmedo, Anthony
    Williams, Rachel
    Pechnikova, Polina
    2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
  • [3] Low Inductance Switching for SiC MOSFET Based Power Circuit
    Shelton, Edward
    Zhang, Xueqiang
    Zhang, Tianqi
    Hari, Nikita
    Palmer, Patrick
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 5093 - 5100
  • [4] SiC Power MOSFET Gate Oxide Breakdown Reliability - Current Status
    Cheung, Kin P.
    2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
  • [5] A Drive Circuit Design Based on SIC MOSFET and Analysis of Problems
    Li Pengfei
    Guo Xibin
    Zhou Haiping
    Zhao Qing
    Jia Longfei
    2019 22ND INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2019), 2019, : 4089 - 4093
  • [6] Power Dissipation of Adiabatic Logic Circuit for FinFET and MOSFET Transistors
    Olanite, Ayodeji
    Musa, Sarhan M.
    6TH IEEE INTERNATIONAL CONFERENCE ON RECENT ADVANCES AND INNOVATIONS IN ENGINEERING (ICRAIE), 2021,
  • [7] Comparison of 300 kHz Class D-ZVS inverters for induction heating with MOSFET transistors based on Si and SiC
    Kasprzak, Marcin
    Przybyla, Krzysztof
    PRZEGLAD ELEKTROTECHNICZNY, 2018, 94 (03): : 60 - 64
  • [8] Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction
    Rabkowski, Jacek
    Platek, Tadeusz
    2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE), 2015,
  • [9] An Ultrafast Universal Short-Circuit Protection Technique Based on Gate Current Detection for SiC MOSFET
    Ke, Zipeng
    Wang, Jun
    Hu, Bo
    Song, Xuanting
    Peng, Zishun
    Dai, Yuxing
    Shen, Z. John
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (10) : 11931 - 11936
  • [10] Assist Gate Driver Circuit on Crosstalk Suppression for SiC MOSFET Bridge Configuration
    Li, Hui
    Zhong, Yi
    Yu, Renze
    Yao, Ran
    Long, Haiyang
    Wang, Xiao
    Huang, Zhangjian
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (02) : 1611 - 1621
12345