THRESHOLD ENERGIES FOR IMPACT IONIZATION BY ELECTRONS AND HOLES IN INP

被引：41
作者：
PEARSALL, TP
机构：
[1] L.C.R. Thomson-CSF
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期
关键词：
D O I：
10.1063/1.91068
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The threshold conditions for impact ionization in InP at 300 K have been calculated from the electronic band structure along the three major symmetry axes. These calculations show that conditions for electron-initiated impact ionization in InP are much more favorable than in GaAs.
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页码：168 / 170
页数：3
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