LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：16
作者：
CHEN, SH
CARTER, CB
PALMSTROM, CJ
机构：
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2] BELL COMMUN RES,REDBANK,NJ 07701
来源：
JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 06期
关键词：
The authors would like to thank Professor J. W. Mayer for valuable discussion; Dr. B. Cunningham and Dr. D. Campbell at IBM; East Fishkill; NY; for supplying the Si3N4/Si samples and discussions on etching techniques; and Dr. T. Ohashi for growing the GaAs thin films. The authors would also like to acknowledge J. A. Hunt; M; Craft; and R. Coles for technical assistance with the TEM and SEM; and Ms. Margaret Fabri-zio for photographic work. The electron microscopes are a Cornell Materials Science Center Facility; which is supported; in part; by the National Science Foundation. The work has been supported by the Semiconductor Research Corporation (SRC) Microscience and Technology Program at Cornell University;
D O I：
10.1557/JMR.1988.1385
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
45
引用
收藏
页码：1385 / 1396
页数：12
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