ARSENIC ATOM LOCATION ON PASSIVATED SILICON (111) SURFACES

被引：95

作者：

PATEL, JR

GOLOVCHENKO, JA

FREELAND, PE

GOSSMANN, HJ

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.36.7715

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7715 / 7717

页数：3

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