MICROKINETIC THEORY OF RADIATION-ENHANCED DIFFUSION IN ELEMENTARY SEMICONDUCTORS

被引：0
作者：
VASILEVSKIY, MI
ERSHOV, SH
PANTELEEV, VA
机构：
来源：
CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS | 1987年 / 13卷 / 3-4期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：289 / 296
页数：8
相关论文
共 19 条
[11]   THEORETICAL-MODEL FOR RADIATION ENHANCED DIFFUSION AND REDISTRIBUTION OF IMPURITIES - COMPARISON WITH EXPERIMENTS [J].
LOUALICHE, S ;
LUCAS, C ;
BARUCH, P ;
GAILLIARD, JP ;
PFISTER, JC .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02) :663-676
[12]  
MURAVJEV VA, 1980, FIZ TVERD TELA+, V22, P780
[13]   MICROSCOPIC DIELECTRIC FUNCTION OF A MODEL SEMICONDUCTOR [J].
SRINIVASAN, G .
PHYSICAL REVIEW, 1969, 178 (03) :1244-+
[14]   RECOMBINATION-ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].
TROXELL, JR ;
CHATTERJEE, AP ;
WATKINS, GD ;
KIMERLING, LC .
PHYSICAL REVIEW B, 1979, 19 (10) :5336-5348
[15]  
VAVILOV VS, 1969, RAD EFFECT SEMICONDU, P311
[16]   NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J].
WATKINS, GD ;
TROXELL, JR .
PHYSICAL REVIEW LETTERS, 1980, 44 (09) :593-596
[17]   DIFFUSION OF GROUP-V IMPURITY IN SILICON [J].
YOSHIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) :702-&
[18]  
1981, 4 ALL UN C MINSK, P11
[19]  
1977, PHYSICAL PROCESSES I, P255
12