STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION

被引：114
作者：
BIMBERG, D
MARS, D
MILLER, JN
BAUER, R
OERTEL, D
机构：
[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
[2] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期
关键词：
D O I：
10.1116/1.583572
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1014 / 1021
页数：8
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