SURFACE ELECTRONIC-STRUCTURE OF A SINGLE-DOMAIN SI(111)4X1-IN SURFACE - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY

被引：137
|
作者：
ABUKAWA, T
SASAKI, M
HISAMATSU, F
GOTO, T
KINOSHITA, T
KAKIZAKI, A
KONO, S
机构：
[1] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 98077,JAPAN
[2] UNIV TOKYO,INST SOLID STATE PHYS,SYNCHROTRON RADIAT LAB,TOKYO 106,JAPAN
来源：
SURFACE SCIENCE | 1995年 / 325卷 / 1-2期
关键词：
ANGLE-RESOLVED PHOTOEMISSION; INDIUM; METALLIC FILMS; METAL-SEMICONDUCTOR NONMAGNETIC THIN FILM STRUCTURES; SILICON; SURFACE ELECTRONIC PHENOMENA; VICINAL SINGLE-CRYSTAL SURFACES;
D O I：
10.1016/0039-6028(94)00693-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic structure of a Si(111)4 x 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1 degrees off-axis Si(lll) wafer as substrate, a single-domain Si(111)4 x 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 x 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 x 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 x 1-In surface.
引用
收藏
页码：33 / 44
页数：12
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