Quadrature squeezed light generation by cross-phase modulation in semiconductors

We have generated pulsed quadrature squeezed light by cross-phase modulation in the single-crystal zincblende semiconductor ZnSe at 960 nm. Squeezing levels of at least 0.3 dB are measured (0.7 dB inferred at the crystal) with pulse widths of less than 100 fs. The technique is straightforward and should be readily applicable to other semiconductors, including waveguide structures. (C) 1995 Optical Society of America