DIELECTRIC-PROPERTIES OF FE(OH)(3) THIN-FILMS FORMED AT SOLUTION-GAS INTERFACE

被引：1

作者：

NIKAM, PS ^{[1
]}

PATHAN, KA ^{[1
]}

机构：

[1] M S G COLL,DEPT PHYS,MALEGAON 423105,INDIA

来源：

BULLETIN OF MATERIALS SCIENCE | 1994年 / 17卷 / 05期

关键词：

CAPACITANCE; DIELECTRIC CONSTANT; LOSS FACTOR; INTERFACIAL POLARIZATION; MICROSCOPIC FIELD DISTORTION;

D O I：

10.1007/BF02757894

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dielectric properties of solution-gas interface-formed Fe(OH), thin-film capacitors (Al/Fe(OH)(3)/Al) of various thicknesses have been studied in the frequency range 10-10(6) Hz at various temperatures (300-443K). Dielectric constant, epsilon, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan delta), showing pronounced minimum with frequency, increases with rise of temperature, and tan delta(min) Shifts to a higher frequency. The large increase in dielectric constant towards low frequency region indicates the possibility of an interfacial polarization mechanism in this region.

引用

页码：493 / 498

页数：6

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