MORPHOLOGY AND GROWTH-PROCESS OF THERMALLY-INDUCED OXIDE PRECIPITATES IN CZOCHRALSKI SILICON

被引：93
|
作者：
SUEOKA, K
IKEDA, N
YAMAMOTO, T
KOBAYASHI, S
机构：
[1] Advanced Technology Research Laboratories, Sumitomo Metal Industries Ltd., Amagasaki 660
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期
关键词：
D O I：
10.1063/1.354254
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The morphology and growth process of oxide precipitates in Czochralski silicon have been studied with prolonged thermal treatments up to 700 h at intermediate temperatures (700-900-degrees-C). It was found with transmission electron microscopy observation that (i) the morphology of precipitates changes from platelet to aggregation of polyhedra at both 800 and 900-degrees-C during isothermal heat treatment, and (ii) the growth of platelet precipitates follows a t1/2 law.
引用
收藏
页码：5437 / 5444
页数：8
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